? semiconductor components industries, llc, 2013 may, 2013 ? rev. 17 1 publication order number: bzx84c2v4lt1/d bzx84bxxxlt1g, bzx84cxxxlt1g series, szbzx84bxxxlt1g, szbzx84cxxxlt1g series zener voltage regulators 225 mw sot ? 23 surface mount this series of zener diodes is offered in the convenient, surface mount plastic sot ? 23 package. these devices are designed to provide voltage regulation with minimum space requirement. they are well suited for applications such as cellular phones, hand held portables, and high density pc boards. features ? 225 mw rating on fr ? 4 or fr ? 5 board ? zener breakdown voltage range ? 2.4 v to 75 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (> 16 kv) per human body model ? tight tolerance series available (see page 4) ? sz prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant mechanical characteristics case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul 94 v ? 0 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information see specific marking information in the device marking column of the electrical characteristics table on page 3 of this data sheet. device marking information http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. bzx84cxxxlt1g sot ? 23 (pb ? free) 3,000 / tape & reel bzx84bxxxlt1g sot ? 23 (pb ? free) 3,000 / tape & reel bzx84cxxxlt3g 10,000 / tape & reel bzx84bxxxlt3g 10,000 / tape & reel sot ? 23 (pb ? free) sot ? 23 (pb ? free) sot ? 23 case 318 style 8 3 cathode 1 anode marking diagram 1 xxx m xxx = device code m = date code* = pb ? free package *date code orientation may vary depending upon manufacturing location. (note: microdot may be in either location) szbzx84bxxxlt1g sot ? 23 (pb ? free) 3,000 / tape & reel szbzx84cxxxlt3g 10,000 / tape & reel sot ? 23 (pb ? free) szbzx84cxxxlt1g sot ? 23 (pb ? free) 3,000 / tape & reel
bzx84bxxxlt1g, bzx84cxxxlt1g series, szbzx84bxxxlt1g, szbzx84cxxxlt1g series http://onsemi.com 2 maximum ratings rating symbol max unit total power dissipation on fr ? 5 board, (note 1) @ t a = 25 c derated above 25 c thermal resistance, junction ? to ? ambient p d r ja 225 1.8 556 mw mw/ c c/w total power dissipation on alumina substrate, (note 2) @ t a = 25 c derated above 25 c thermal resistance, junction ? to ? ambient p d r ja 300 2.4 417 mw mw/ c c/w junction and storage temperature range t j , t stg ? 65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.62 in. 2. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina. electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.90 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f v z maximum temperature coefficient of v z c max. capacitance @ v r = 0 and f = 1 mhz zener voltage regulator i f v i i r i zt v r v z v f
bzx84bxxxlt1g, bzx84cxxxlt1g series, szbzx84bxxxlt1g, szbzx84cxxxlt1g series http://onsemi.com 3 electrical characteristics ? bzx84cxxxlt1 series (standard tolerance) (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.90 v max. @ i f = 10 ma) (devices listed in bold, italic are on semiconductor preferred devices.) device* device marking v z1 (volts) @i zt1 =5ma (note 3) z zt1 ( ) @ i zt1 = 5 ma v z2 (v) @i zt2 =1ma (note 3) z zt2 ( ) @ i zt2 = 1 ma v z3 (v) @i zt3 =20ma (note 3) z zt3 ( ) @ i zt3 = 20 ma max reverse leakage current vz (mv/k) @ i zt1 = 5 ma c (pf) @ v r = 0 f = 1 mhz min nom max min max min max v r volts i r a @ min max bzx84c2v4lt1g z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 ? 3.5 0 450 bzx84c2v7lt1g z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 ? 3.5 0 450 bzx84c3v0lt1g z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 ? 3.5 0 450 bzx84c3v3lt1g z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 ? 3.5 0 450 bzx84c3v6lt1g z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 ? 3.5 0 450 bzx84c3v9lt1g z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 ? 3.5 ? 2.5 450 bzx84c4v3lt1g w9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 ? 3.5 0 450 bzx84c4v7lt1/t3g z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 ? 3.5 0.2 260 bzx84c5v1lt1/t3g z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 ? 2.7 1.2 225 bzx84c5v6lt1/t3g z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 ? 2.0 2.5 200 bzx84c6v2lt1/t3g z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 bzx84c6v8lt1/t3g z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 bzx84c7v5lt1g z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 bzx84c8v2lt1g z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 bzx84c9v1lt1/t3g z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 bzx84c10lt1g z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 bzx84c11lt1g y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 bzx84c12lt1g y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 bzx84c13lt1g y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 bzx84c15lt1/t3g y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 bzx84c16lt1g y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 bzx84c18lt1/t3g y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 bzx84c20lt1g y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 bzx84c22lt1g y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 bzx84c24lt1g y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 device* device marking v z1 below @i zt1 =2ma z zt1 below @ i zt1 = 2 ma v z2 below @i zt2 = 0.1 m- a z zt2 below @ i zt4 = 0.5 ma v z3 below @i zt3 =10ma z zt3 below @ i zt3 = 10 ma max reverse leakage current vz (mv/k) below @ i zt1 = 2 ma c (pf) @ v r = 0 f = 1 mhz min nom max min max min max v r (v) i r a @ min max bzx84c27lt1g y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70 bzx84c30lt1g y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70 bzx84c33lt1/t3g y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70 bzx84c36lt1g y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70 bzx84c39lt1g y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 bzx84c43lt1g y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 bzx84c47lt1g y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 bzx84c51lt1g y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 bzx84c56lt1g y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 bzx84c62lt1g y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 bzx84c68lt1g y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 bzx84c75lt1g y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c. *include sz-prefix devices where applicable.
bzx84bxxxlt1g, bzx84cxxxlt1g series, szbzx84bxxxlt1g, szbzx84cxxxlt1g series http://onsemi.com 4 electrical characteristics ? bzx84bxxxl (tight tolerance series) (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.90 v max. @ i f = 10 ma) device device marking v z (volts) @ i zt = 5 ma (note 4) z zt ( ) @ i zt = 5 ma (note 4) max reverse leakage current vz (mv/k) @ i zt = 5 ma c (pf) @ v r =0, f = 1 mhz i r @ v r min nom max max a volts min max bzx84b4v7lt1g t10 4.61 4.7 4.79 80 3 2 ? 3.5 0.2 260 bzx84b5v1lt1g t11 5.00 5.1 5.20 60 2 2 ? 2.7 1.2 225 bzx84b5v6lt1g t12 5.49 5.6 5.71 40 1 2 ? 2 2.5 200 bzx84b6v2lt1g t13 6.08 6.2 6.32 10 3 4 0.4 3.7 185 bzx84b6v8lt1g t14 6.66 6.8 6.94 15 2 4 1.2 4.5 155 bzx84b7v5lt1g t15 7.35 7.5 7.65 15 1 5 2.5 5.3 140 bzx84b8v2lt1g t16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135 bzx84b9v1lt1g t17 8.92 9.1 9.28 15 0.5 6 3.8 7 130 bzx84b12lt1g t18 11.8 12 12.2 25 0.1 8 6 10 130 bzx84b15lt1g t22 14.7 15 15.3 30 0.05 10.5 9.2 13 110 bzx84b16lt1g t19 15.7 16 16.3 40 0.05 11.2 10.4 14 105 bzx84b18lt1g t20 17.6 18 18.4 45 0.05 12.6 12.4 16 100 bzx84b22lt1g t24 21.6 22 22.4 55 0.05 15.4 16.4 20 85 bzx84b24lt1g t25 23.5 24 24.5 70 0.05 16.8 18.4 22 80 4. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c. electrical characteristics ? bzx84bxxxl (tight tolerance series) (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.90 v max. @ i f = 10 ma) device* device marking v z (volts) @ i zt = 2 ma (note 4) z zt ( ) @ i zt = 2 ma (note 4) max reverse leakage current vz (mv/k) @ i zt = 2 ma c (pf) @ v r =0, f = 1 mhz i r @ v r min nom max max a volts min max bzx84b27lt1g t27 26.5 27 27.5 80 0.05 18.9 21.4 25.3 70 *include sz-prefix devices where applicable.
bzx84bxxxlt1g, bzx84cxxxlt1g series, szbzx84bxxxlt1g, szbzx84cxxxlt1g series http://onsemi.com 5 typical characteristics vz , temperature coefficient (mv/ c) v z , nominal zener voltage (v) -3 -2 -1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range ? 55 c to +150 c) typical t c values v z @ i zt vz , temperature coefficient (mv/ c) 100 10 1 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range ? 55 c to +150 c) v z @ i zt 100 v z , nominal zener voltage figure 3. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 4. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmbz5267blt1) 91 v (mmbz5270blt1) 150 c 75 c 25 c 0 c typical t c values
bzx84bxxxlt1g, bzx84cxxxlt1g series, szbzx84bxxxlt1g, szbzx84cxxxlt1g series http://onsemi.com 6 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 5. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) 90 v z , nominal zener voltage (v) figure 6. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c -55 c i z , zener current (ma) figure 7. zener voltage versus zener current (v z up to 12 v) figure 8. zener voltage versus zener current (12 v to 91 v)
bzx84bxxxlt1g, bzx84cxxxlt1g series, szbzx84bxxxlt1g, szbzx84cxxxlt1g series http://onsemi.com 7 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 8: pin 1. anode 2. no connection 3. cathode *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bzx84c2v4lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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